VLSI Process Technology (3-0-0-3)


  • To provide rigorous foundation in MOS and CMOS fabrication process.



Electron grade silicon. Crystal growth. Wafer preparation. Vapour phase and molecular beam epitaxy. SOI.Epitaxial evaluation. Oxidation techniques, systems and properties. Oxidation defects.

Optical, electron, X-ray and ion lithography methods. Plasma properties, size, control, etch mechanism, etch techniques and equipments.

Deposition process and methods. Diffusion in solids. Diffusion equation and diffusion mechanisms.

Ion implantation and metallization. Process simulation of ion implementation, diffusion, oxidation,  epitaxy, lithography, etching and deposition. NMOS, CMOS, MOS memory and bipolar IC technologies.   IC fabrication.

Analytical and assembly techniques. Packaging of VLSI devices.

Text Books

1.   S.M.Sze, “VLSI Technology (2/e)” , McGraw Hill, 1988

2.   W. Wolf, “Modern VLSI Design”, (3/e), Pearson,2002


Students are able to

CO1: appreciate the various techniques involved in the VLSI fabrication process.

CO2: understand the different lithography methods and etching process.

CO3: appreciate the deposition and diffusion mechanisms.

CO4: analyse the fabrication of NMOS,CMOS memory and bipolar devices

        CO5: understand the nuances of assembly and packaging of VLSI devices.