BEEE11

VLSI DESIGN

OBJECTIVE: To understand the VLSI design methodology and fabrication of MOS and CMOS circuits.

1.OVERVIEW OF VLSI DESIGN METHODOLOGY 8

The VLSI design process - Architectural design-Logical design-Physical design-Layout styles - Full custom-Semi custom approaches. Basic electrical properties of mos and cmos circuits :Ids verses Vds relationships - Transconductance - pass transistor - nMOS inverter - Determination of pull up to pull down ratio for an nMOS inverter - The CMOS inverter-MOS transistor circuit mode

2. VLSI FABRICATION TECHNOLOGY

An overview of wafer fabrication-wafer processing-oxidation-Patterning-Diffussion-Ion implantation-Deposition-Silicon gate nMOS process-nwell CMOS process-pwell CMOS process-Twintub process-Silicon on insulator.

3.MOS AND CMOS CIRCUIT DESIGN PROCESS

MOS layers-Stick diagrams-nMOS design style-CMOS design style-Design rules and layout-Lamda based design rules-Contact cuts-Double metal MOS process rules-CMOS lambda based design rules- Sheet resistance-Inverter delay-Driving large capacitive loads-Wiring capacitance.

4. SUBSYSTEM DESIGN

Switch logic-pass transistor and transmission gates-Gate logic-inverter-Two input NAND gate-NOR gate-other forms of CMOS logic-Dynamic CMOS logic-Clocked CMOS logic-CMOS domain logic-simple combinational logic design examples-Parity generator-Multiplexers.

5. SEQUENTIAL CIRCUITS

Two phase clocking-Charge storage-Dynamic shift register-precharged bus-General arrangement of a 4 bit arithmetic processor-Design of a 4 bit shifter-FPGAs and PLDs