Publications

Publications in International Journals (59)

  1. Hydrothermally synthesized Copper Oxide (CuO) superstructures for ammonia sensing.

Bhuvaneshwari, S., and N. Gopalakrishnan.

Journal of Colloid and Interface Science 480 (2016) 76–84.

 

  1. Room temperature ammonia and VOC sensing properties of CuO nanorods.

Bhuvaneshwari, S., and N. Gopalakrishnan

AIP Conf. Proc. 1731, 050112 (2016).

 

  1. Facile synthesis of low dimensional CuO nanostructures and their gas sensing applications. 

Bhuvaneshwari, S., and N. Gopalakrishnan.

Crystal Research and Technology 51 (2016) 145–153.

 

  1. Enhanced ammonia sensing characteristics of Cr doped CuO nanoboats.

Bhuvaneshwari, S., and N. Gopalakrishnan.

 Journal of Alloys and Compounds 654 (2016) 202-208.

 

  1. Optimization of CuO Ultra Thin Film for Gas Sensor Application by RF Magnetron Sputtering

N.Gopalakrishnan, L.Balakrishnan, B. Arunkumar and S. Gowrishankar

Journal of Nanoelectronics and Optoelectronics 9 (2014) 496-501.

 

  1. A Comparative Study on p-ZnO:AlAs/n-ZnO:Al and p-ZnO:AlAsN/n-ZnO:Al Bilayer Homojunction Diodes Performance

.           L. Balakrishnan, S.Gowrishankar, and N. Gopalakrishnan

ECS Solid State Letters 3 (2014) Q20-Q23

 

  1. Role of surface functionalization in ZnO:Fe nanostructures

R.N. Lokesh, L. Balakrishnan, K. Jeganathan, Samar Layek, H.C. Verma,                            N. Gopalakrishnan

Materials  Science  and  Engineering  B  183 (2014) 39– 46.

 

  1. Bandgap engineering in Zn(1-x)CdxO and Zn(1-x)MgxO thin films by RF Sputtering.

S. Gowrishankar, L. Balakrishnan and N. Gopalakrishnan

Ceramics International 40 (2014) 2135-2142.

 

  1. Hydrothermal Synthesis and Gas Sensing Properties of CuO Nanorods

N. Gopalakrishnan, S. Bhuvaneshwari, L.Balakrishnan and S.Gowrishankar

Sensor letters 11 (2013) 2233-2240.

 

  1. Fabrication of p-ZnO:ZrN thin films by RF magnetron sputtering.

S. Gowrishankar, L. Balakrishnan and N. Gopalakrishnan

Composite Interfaces 20 (2013) 623-634.

 

  1. p-type formation mechanism of codoped and tridoped ZnO thin films.

L. Balakrishnan, S.R. Barman and N. Gopalakrishnan

Science of Advanced Materials 5 (2013) 462-468.


 

  1. Fabrication of n-Zn1-xGaxO and p-(ZnO)1-x(GaP)x thin films and homojunction.

S. Gowrishankar, L. Balakrishnan, T. Balasubramanian and N. Gopalakrishnan  

Materials Science and Engineering B 178 (2013) 31– 38.

 

  1. Activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine

G. Jayalakshmi, N. Gopalakrishnan, T. Balasubramanian

Journal of Alloys and Compounds 551 (2013) 667-671.


 

  1. NH3 sensing by p-ZnO thin films.

L. Balakrishnan, S. Gowrishankar and N. Gopalakrishnan

IEEE Sensors Journal 13 (2013) 2055-2060.

 

  1. Influence of oxygen partial pressure on ferromagnetic switching characteristics of ZnO:Cr thin films.

N. Gopalakrishnan, L. Balakrishnan, M. Suganya and S. Gowrishankar

Composite Interfaces 20 (2013) 221-228.

 

  1. Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering.

L. Balakrishnan, S. Gowrishankar and N. Gopalakrishnan

Ceramics International 38 (2012) 6221–6227.

 

  1. Fabrication of Al3+ and large radii mismatch As5+ codoped p-ZnO thin film and homojunction.

L. Balakrishnan and N. Gopalakrishnan

Thin Solid Films 520 (2012) 5702–5705.

 

  1. Dual  codoping  for  the  fabrication  of  low  resistive  p-ZnO

L.  Balakrishnan, S.  Gowrishankar, P.  Premchander and N.  Gopalakrishnan

Journal of Alloys and Compounds 512 (2012) 235– 240.

 

  1. Thickness and substrate orientation dependence of ferromagnetism in Mn doped ZnO thin films

N. Gopalakrishnan, L. Balakrishnan, A. Brindha and G. Jayalakshmi

Cryst. Res. Technol., 47 (2012) 45-52.

 

  1. Optimization of Anodic Layer and Fabrication of Organic Light Emitting Diode.

N. Gopalakrishnan, S. Gowrishankar, T. R. Devidas and L. Balakrishnan  

Advanced Materials Research 488-489 (2012) 1348-1352.

 

  1. Influence of Al concentration on electrical, structural and optical properties

of Al–As codoped p-ZnO thin films

L. Balakrishnan, S. Gowrishankar, J. Elanchezhiyan, N. Gopalakrishnan

Physica B 406 (2011) 4447 –4452.

 

  1. Grain boundary defects induced room temperature ferromagnetism in V doped ZnO thin films

G. Jayalakshmi, N. Gopalakrishnan, B.K. Panigrahi, T. Balasubramanian

Crystal Research and Technology 46 (2011) 1257-1264

 

  1. Realization of p-ZnO thin films by GaP codoping

S. Gowrishankar, L. Balakrishnan, J. Elanchezhiyan, T. Balasubramanian,

N. Gopalakrishnan,

Physica B 406 (2011) 4085–4088.

 

  1. Influence of substrate and film thickness on structural, optical

and electrical properties of ZnO thin films

N. Gopalakrishnan, L. Balakrishnan, K. Latha, and S. Gowrishankar

Cryst. Res. Technol.46 (2011) 361-367.


 

  1. AlN codoping and fabrication of  ZnO homojunction by RF sputtering

L. Balakrishnan, P. Premchander, T. Balasubramanian, N. Gopalakrishnan

Vacuum 85 (2011) 881-886.

 

  1. Influence of grain size on the properties of AlN doped ZnO thin film

K.P. Bhuvana, J. Elanchezhiyan, N. Gopalakrishnan, T. Balasubramanian

Materials Science in Semiconductor Processing 14 (2011) 84-88.

 

  1. Characterization of (ZnO)1-x(AlN)x/ZnO junction for optoelectronic applications

N. Gopalakrishnan, L. Balakrishnan, V. Senthamizh Pavai, J. Elanchezhiyan,

T. Balasubramanian

Current Applied Physics 11 (2011) 834-837.

 

  1. Influences of thermal annealing on the stuctural, optical and electrical properties of nanostructured cadmium sulphide thin films

G. Bakiyaraj, N. Gopalakrishnan and R. Dhanasekaran

Chalcogenide Letters 8 (2011) 419-426.

 

  1. Vacancy mediated room temperature ferromagnetism in Zn1-xMnxO thin films

N. Gopalakrishnan, L. Balakrishnan, B. Srimathy, M. Senthil Kumar and

T. Balasubramanian

Physics Status Solidi A 207 (2010) 2180–2184.

 

  1. Nucleation and characterization of Zn1-xMnxO thin films deposited on different   

substrates

N. Gopalakrishnan, J. Elanchezhiyan, K.P. Bhuvana   and T. Balasubramanian

Physica B: Condensed Matter 404 (2009) 1563-1567.

 

  1. Investigations of the properties of Zn1−xCrxO thin films grown by RF magnetron sputtering

J. Elanchezhiyan, K.P. Bhuvana, N. Gopalakrishnan, B.C. Shin, W.J. Lee,          

T. Balasubramanian

Journal of Alloys and Compounds 478 (2009) 45-48.

 

  1. A novel approach for codoping in ZnO by AlN

K.P. Bhuvana, J. Elanchezhiyan, N. Gopalakrishnan, B.C. Shin, W.J. Lee,               T. Balasubramanian

Vacuum 83 (2009) 1081-1085.



 

  1. Realization of p-type conduction in (ZnO)1-x(AlN)x thin films grown by RF magnetron sputtering

K.P. Bhuvana J. Elanchezhiyan, N. Gopalakrishnan and T. Balasubramanian

Journal of Alloys and Compounds 478 (2009) 54-58.


 

  1. Realization of room temperature ferromagnetism in Zn1−xCrxO thin films grown by RF magnetron sputtering

J.Elanchezhiyan, K.P. Bhuvana, N. Gopalakrishnan, Yong Chang, S. Sivananthan,                    M. Senthil Kumar and  T. Balasubramanian

Journal of Alloys and Compounds 468 (2009) 7–10


 

  1. Optimization of Zn1-xAlxO film for antireflection coating by R.F. sputtering

K.P. Bhuvana J. Elanchezhiyan, N. Gopalakrishnan and T. Balasubramanian

J. of Alloys and Compounds   473(2009) 534-537.

         

  1. Codoped (AlN) and monodoped (Al) ZnO thin films grown by R.F. Sputtering; A comparative study

K.P. Bhuvana J. Elanchezhiyan, N. Gopalakrishnan and T. Balasubramanian

Applied Surface Science 255 (2008) 2026–2029

 

  1. On the nucleation and growth of Zn1-xMnxO thin films grown by RF magnetron sputtering

N.Gopalakrishnan, J. Elanchezhiyan, K.P. Bhuvana   and T. Balasubramanian

Scripta Materialia. 58 (2008) 930-933


 

  1. Fabrication of GaN doped ZnO nanocrystallines by Laser ablation

N. Gopalakrishnan, B.C. Shin, K.P. Bhuvana, J. Elanchezhiyan and T. Balasubramanian       

J. of Nanoscience and Nanotechnology 8 (2008) 4168-4171.

 

  1. Improvement of stoichiometry in  (ZnO)1-x(GaN)x thin films grown by Laser ablation

N. Gopalakrishnan, B.C. Shin, K.P. Bhuvana,  J. Elanchezhiyan and T. Balasubramanian

J. of  Alloys and Compounds  465 (2008) 502-505.

 

  1. Effect of doping concentration on Zn1-xMnxO thin films grown by RF magnetron    

sputtering

J. Elanchezhiyan, K.P. Bhuvana, N. Gopalakrishnan and T. Balasubramanian

Z. Naturforsch 63 a (2008) 585-590.

 

  1. Investigation on Mn doped ZnO epitaxial films grown by RF magnetron sputtering

J. Elanchezhiyan, K.P. Bhuvana, N. Gopalakrishnan and T. Balasubramanian

Materials Letters 62 (2008) 3379-3381.

 

  1. Substrates effect on Zn1-xMnxO thin films grown by RF magnetron sputtering

J. Elanchezhiyan, K.P. Bhuvana, N. Gopalakrishnan and T. Balasubramanian

J. of Alloys and Compounds 463(2008) 84-88.


 

  1. Influence of post-deposition annealing on the structural and optical properties of ZnO thin films prepared by sol–gel and spin-coating method.

G. Srinivasan, N. Gopalakrishnan, Y.S. Yu, R. Kesavamoorthy and J. Kumar

Superlattices and Microstructures 43(2008) 112-119.


 

  1. Development of NLO tunable band gap organic devices for optoelectronic  applications

B. K. Periyasamy, Robinson S. Jebas, N. Gopalakrishnan, T.Balasubramanian

Materials Letters 61(2007)4246-4249.

 

  1. An attempt on triple doping in ZnO by  pulsed laser deposition

N. Gopalakrishnan, B.C. Shin and T. Balasubramanian

Materials Letters 61 (2007) 4420-4422.

 

  1. Effect of GaN doping on ZnO films by pulsed laser deposition

N. Gopalakrishnan, B.C. Shin, H.S. Lim, T. Balasubramanian and Y.S. Yu

Materials Letters 61 (2007)2307-2310.

 

  1. Codoping  in  ZnO using  GaN  by pulsed laser deposition

N. Gopalakrishnan, B.C. Shin, H.S. Lim, T. Balasubramanian and Y.S. Yu

Journal of Crystal Growth 294(2006)273-277.

 

  1. Comparison of ZnO:GaN films on Si(111) and Si(100)  substrates by  pulsed  

laser deposition

N. Gopalakrishnan, B.C. Shin, H.S. Lim, G.Y. Kim and Y.S. Yu.

Physica B 376-377 (2006) 756-759.

 

  1. Effect of low temperature grown buffer layer  thickness on  the  growth of GaAs on Si  by MBE.

N. Gopalakrishnan, K. Baskar, H. Kawanami and I. Sakata

Journal of Crystal Growth 250(1-2)(2003)29-33.

 

  1. Rapid epitaxial growth of conducting and insulating III-V  compounds on (001),

(110), (111)A,  (311)A and (311)B surfaces by HVPE.

S. Lourdudoss, N. Gopalakrishnan, H. Holtz, M. Deschler and R. Beccard

Metallurgical and Materials Transactions A, 30A (1999)1047-1051

 

  1. Self consistent model for InP selective regrowth by Hydride Vapour Phase epitaxy.
    N. Gopalakrishnan , E.R. Messmer and S. Lourdudoss
    Japanese Journal of Applied Physics, 38 (1999) 1037-1039

 

  1. Investigations on the nucleation kinetics of L-Arginen Phosphate single crystals.

P. Mohankumar,  N. Gopalakrishnan, R. Jayavel and P. Ramasamy

Crystal Research Technology 34(1999)1265-1268.

 

  1. Compositional  analysis on quaternary GaxIn1-xAsyP1-y vapour phase epitaxy: A          

comparison between theory and experiment.

N. Gopalakrishnan, R. Dhanasekaran and S. Lourdudoss

Materials Chemistry and Physics 50(1997) 70-75.



 

  1. Thermodynamic analysis of GaAs1-xPx  vapour phase epitaxy

N. Gopalakrishnan and R. Dhanasekaran

J.of Electrochemical Soc., 143 (1996) 2631-2635.

 

  1. On the  nucleation and  composition analysis of InAs1-xPx   vapour phase   

epitaxial  growth

N. Gopalakrishnan and R. Dhanasekaran
       J. Crystal Growth 162(1996)113-120.

  1. Epitaxial nucleation and growth mechanism of III-V compound semiconductors.
    N. Gopalakrishnan, R.S. Qhalid Fareed and R. Dhanasekaran
    J. of Indian Institute of Sciences 76 (1996) 15-21.

 

  1. Evaluation of composition and growth rate of  GaxIn1-xP  vapour phase epitaxy    
    N. Gopalakrishnan and R. Dhanasekaran
    Materials Chemistry and Physics 45 (1995) 15-21.

 

  1. Investigations on the two dimensional nucleation and growth kinetics of InP vapour phase  epitaxy.

N. Gopalakrishnan, R. Dhanasekaran and P. Ramasamy

J. Crystal Growth 137 (1994) 235-239.

 

  1. Vibrational transition probability and dissociation energy data for AsN  molecule

N. Rajamanickam, R.N. Senthilkumar, S. Ganesan, N. Gopalakrishnan,     

J. Rajkumar, V. Jegadesan and C. Dhandapani.

Acta Physica Hungarica 70 (1991) 71-76.