Conference Publications

Papers Published(Proceedings) /Presented/ Participated in the International Conferences (38)

  1. Metal Oxide Semiconductors for Gas Sensing Application 

Vinoth RAJ, Bhuvaneshwari S, Gopalakrishnan NAMMALVAR

ICEM16-A-0916, Suntec Singapore,

04th to 08th July, 2016.

 

  1. Synthesis and Characterisation of ZnO Hierarchical Nanoflowers, Multi-linked and

High Aspect Nanorods (ICMAT13-A-2150)

R.N. Lokesh, L. Balakrishnan, K. Jeganathan and N. Gopalakrishnan

7thInternational Conference on Materials for Advanced Technologies, Suntec Singapore,

30 June -5 July 2013

 

  1. Synthesis and Gas Sensing Properties of CuO Nanorods (ICMAT13-A-2168 )

N. Gopalakrishnan, S. Bhuvaneshwari andL. Balakrishnan.

7th International Conference on Materials for Advanced Technologies, Suntec Singapore,

30 June -5 July 2013

 

  1. Optimization of anodic layer and fabrication of organic light emitting diode.

N. Gopalakrishnan, S. Gowrishankar, T.R. Devidas and L. Balakrishnan

2nd International Conference on Key Engineering Materials (ICKEM 2012), Singapore, February 2012.

Advanced Materials Research, Vols. 488-489 (2012) 1348-1352

 

  1. Fabrication of p-ZnO thin films by ZrNcodoping.

S. Gowrishankar, L. Balakrishnan and N. Gopalakrishnan

SPIE Optics+Photonics 2012, San Diego, USA, August 2012

Proceedings of SPIE, Vol. 8484(2012) 84840W-1-84840W-6.

 

  1. Fabrication of ZnOhomojunction by Al-As-N tridoping.

L. Balakrishnan, S. Gowrishankar and N. Gopalakrishnan

International Semiconductor Device Research Symposium 2011 (ISDRS 2011), University of Maryland, Maryland, USA, December 2011(IEEE Xplore).

DOI: 10.1109/ISDRS.2011.6135234

 

  1. Realization of n-ZnO:Ga/p-ZnO:GaPhomojunction by RF magnetron sputtering.

S. Gowrishankar, L. Balakrishnan, T. Balasubramanian and N. Gopalakrishnan

International Semiconductor Device Research Symposium 2011 (ISDRS 2011), University of Maryland, Maryland, USA, December 2011(IEEE Xplore).

DOI: 10.1109/ISDRS.2011.6135308

 

  1. Effects of oxygen partial pressure on Zn0.95Cr0.05O thin films grown by RF sputtering.

N. Gopalakrishnan, L. Balakrishnan, M. Suganya, S. Gowrishankar and G. Jayalakshmi

International Conference on Nanoscience and Nanotechnology (ICNN 2011), Coimbatore Institute of Technology, Coimbatore, India, July 2011.

 

  1. Dual codoping for the fabrication of low resistive p-ZnO.

L. Balakrishnan, S. Gowrishankar, J. Elanchezhiyan, B.C. Shin, T. Balasubramanian and N. Gopalakrishnan

The 16th International Conference on Crystal Growth (ICCG-16), Chinese Academy of Sciences, Beijing, China, August 2010.

 

  1. Fabrication of p-n junction with ZnO nanostructures by a novel approach.

L. Balakrishnan, S. Gowrishankar, T. Balasubramanian and N. Gopalakrishnan International Conference on “Synthesis, Characterization Consolidation and Modelling of Nanomaterials” (ICON-2010), PSG College of Technology, Coimbatore, March 2010.

  1. Vacancy mediated ferromagnetism in Zn0.85Mn0.15O nanostructures.

L. Balakrishnan, G. Jayalakshmi, B. Srimathy, M. Senthilkumar, T. Balasubramanian and

N. Gopalakrishnan

International Conference on “Synthesis, Characterization Consolidation and Modelling of

Nanomaterials” (ICON-2010), PSG College of Technology, Coimbatore, March 2010.

 

  1. Dual codoping for the fabrication of low resistive p-ZnO

L.Balakrishnan, S.Gowrishankar, J.Elanchezhiyan, B.C.Shin, T.Balasubramanian and N.Gopalakrishnan

The 16th International Conference on Crystal Growth (ICCG-16) held at Beijing, China during Aug. 8-13, 2010.

 

  1. Fabrication of p-n junction with ZnO nanostructures by a novel approach

L.Balakrishnan, S.Gowrishankar, T.Balasubramanian and N.Gopalakrishnan
Internation Conference on “Synthesis, Characterization Consolidation and Modelling of Nanomaterials” (ICON-2010) held at PSG College of Technology, Coimbatore during Mar. 5-6, 2010.

  1. Vacancy mediated ferromagnetism in Zn0.85Mn0.15O nanostructures

L.Balakrishnan, G.Jayalakshmi, B.Srimathy, M.Senthilkumar, T.Balasubramanian and N.Gopalakrishnan

Internation Conference on “Synthesis, Characterization Consolidation and Modelling of Nanomaterials” (ICON-2010) held at PSG College of Technology, Coimbatore during

Mar. 5-6, 2010.

 

  1. Participated in “International Conference on Experimental Condensed Matter Physics”, IIT-

Bombay, Mumbai, India, Jan. 8-10, 2007.

 

  1. ZnO based diluted magnetic semiconductor thin films by RF magnetron sputtering for spin photonic devices

J. Elanchezhiyan, K. P. Bhuvana, N. Gopalakrishnan and T. Balasubramanian

Proc. SPIE. 6674 (2007) 66740C-66746C.

 

  1. A novel approach for development of co-doped ZnO semiconductor film bypulsed laser deposition and R.F.Sputterring.

N.Gopalakrishnan, B.C.Shin, K.P.Bhuvana, J.Elanchezhiyan and T.Balasubramanian

Proceeding of 5th International conference on ‘Trends in Industrial measurements and Automation -TIMA-2007’ Jan.2007,NIT, Tiruchirapalli, India. pp.97-101.

  1. ZnO films grown by pulsed laser deposition.

N.Gopalakrishnan, B.C.Shin, H.S.Lim, G.Y.Kim ,J.Kumar, T.Balasubramanianand Y.S.Yu.

Proceedings of the “International workshop on Crystal Growth and Characterization of

Advanced Materials”, Anna University, Chennai, Jan. 2006, pp.336-344.

 

  1. (Ga+N) Codoping in ZnO by Laser ablation

N.Gopalakrishnan, K.P.Bhuvana, J.Elanchezhiyan,B.C.Shin,H.S.Lim, T.Balasubramanian,

J.Kumar and Y.S.Yu.

International Conference on Nanoscience and Technology held at University of Madras, Chennai, during 26 – 28 Aug 2006.

 

  1. Fabrication of GaN doped ZnOnanocrystallines by Laser ablation

N.Gopalakrishnan, B.C.Shin, K.P.Bhuvana, J.Elanchezhiyan and T.Balasubramanian

International conference on Advanced Nanomaterials 2007 to be held at Indian Institute of Technology Bombay, Mumbai during 8-10 Jan.2006.

 

  1. Red Shift of NBE in Triple CodopedZnO by Pulsed Laser Deposition

N.Gopalakrishnan, H.S.Lim, J.Y.Sohn, Sun Yoon, Taeheo Lee, BeomeeKim andY.S.Yu

Korean Physical Society Meetings, Seoul, April 21-23, 2005

 

  1. Growth of ZnO:Ga, In, N by Pulsed Laser Deposition

J.Y.Sohn, N.Gopalakrishnan,H.S.Lim, B.I. Kim, SeunghwanLee,Yeunkju Lee and Y.S.Yu

Korean Physical Society Meetings, Seoul, April 21-23, 2005

 

  1. Comparison of ZnO:GaN films on Si(111) and Si(100) substrates by pulsed laser deposition

N.Gopalakrishnan, B.C.Shin, H.S.Lim, G.Y.Kim and Y.S.Yu

ICDS-23, Awaji Island, Hyogo, Japan, July 24-29, 2005

 

  1. Growth of ZnO:BN by Pulsed Laser Deposition

N.Gopalakrishnan,H.S.Lim and Y.S.Yu

11th International Meetings on Ferroelectricity, Foz do Iguacu, Brazil, Sept.5-9, 2005.

 

  1. Improvement of ZnO Properties by Triple Codoping in Pulsed Laser Deposition

N.Gopalakrishnan,H.S.Lim and Y.S.Yu

11th International Meetings on Ferroelectricity, Foz do Iguacu, Brazil, Sept.5-9, 2005.

 

  1. A Novel approach to ZnO by PLD

N.Gopalakrishnan,J.Y.Sohn ,H.S.Lim, B.I. Kim andY.S.Yu

3rd International Workshop on ZnO and Related Materials.Sendai, Japan,October 6-8, 2004

 

 

  1. Optical Characterisation of  GaAs:Si/Si  Grown by  Molecular  Beam Epitaxy(MBE)

N.Gopalakrishnan

14th International Conference on Crystal Growth, 9-13 August 2004, Grenoble, France.

 

  1. Tri-doped (Ga, In, n) ZnO by Pulsed Laser Deposition

J.Y.Sohn, N.Gopalakrishnan,H.S.Lim, B.I. Kim andY.S.Yu

3rd International Workshop on ZnO and Related Materials.Sendai, Japan,October 6-8, 2004

 

  1. Band gap engineering of ZnO thin films prepared by pulsed Laser deposition

B.I.Kim, N.Gopalakrishnan,H.S.Lim ,J.Y.Sohn and Y.S.Yu

3rd International Workshop on ZnO and Related Materials.Sendai, Japan,October 6-8, 2004.

 

  1. Anisotropy behaviour in InP Selective Regrowth by Hydride Vapour PhaseEpitaxy

N.Gopalakrishnan, E.R.Messmer and S.Lourdudoss.

18th Nordic Semiconductor Meeting, Linkoping University, Linkoping, Sweden.

 

  1. Effect of Buffer layer thickness on morphology and optical property of GaAs/Si by MBE.

N.Gopalakrishnan, K.Baskar, H.Kawanami and I.Sakata

14th American Conference on Crystal Growth and Epitaxy to be held at Seattle USA during 4-9 August 2002.

  1. Rapid Epitaxial Growth of Conducting and Insulating III-V Compounds on (001), (110),

(111)A, (311)A and (311)B Surfaces by HVPE.

S.Lourdudoss, N.Gopalakrishnan, H.Holtz, M.Deschlerand R.Beccaed

TMS International Symposium on Value-Addition Metallurgy, San Antonia, Texas, USA,

Feb.1998.

 

  1. Nucleation mechanism in Vapour Phase Epitaxial Growth of binary, ternary and quaternary

semiconductors

N.Gopalakrishnan and R.Dhanasekaran

Proceedings of 14th International Conference on Nucleation and Atmospheric

Aerosols, Helsinki, 26 - 30 August 1996.

Nucleation and Atmospheric Aerosols 1996, pp.149-152.

 

 

  1. Growth kinetics of vapour phase peitaxial growth of Ga1-yInyAs1-xPx compounds

N.Gopalakrishnan R.Dhanasekaran and P.Ramasamy

Eighth International Conference on Vapour Growth and Epitaxy (ICVGE-8),

Albert LudwigsUniversitat, Germany. July 24-29, 1994.

  1. Investigations on the Nucleation and growth kinetics of InAs1-xPx vapour Phase epitaxy

N.Gopalakrishnan,R.Dhanasekaran and P.Ramasamy

IUMRS International Conference on Electronic Materials, Hsinchu, Taiwan, Dec.19-22, 1994

 

  1. Growth Kinetics of Ga1-yInyAs1-xPx quaternary compound semiconductor thin filmby vapour phase epitaxial growth.

N.Gopalakrishnanand R.Dhanasekaran

Seventh international conference on solid films and surfaces, Hsinchu, Taiwan, Dec.19-22, 1994.

 

  1. Investigations on the epitaxial growth of compound semiconductors

N.Gopalakrishnan, R.S.Q.Fareed, R.Jothilingam, S.MoorthyBabu, R.Dhanasekaranand

P.Ramasamy

Faraday Society, "General Discussion 95 Crystal Growth", Univ. of Strcthclyde, U.K, April 14-16, 1993.

 

  1. Investigations on the two dimensonal nucleation an growth kinetics of InP VapourPhase epitaxy

N.Gopalakrishnan, R.Dhanasekaran and P.Ramasamy

Ninth American Conference on Crystal Growth (ACCG-9), Baltimore,Maryland, U.S.A, Aug.1-6, 1993.

 

  1. On the Nucleation, Growth and Characterisation of KDP-ADP mixed crystal

K.Srinivasan, G.Ravi, N.Gopalakrishnan, S.AnbukumarR.Dhanasekaran and P.Ramasamy

Eighth international meeting on Ferroelectricity, NIST, Gaithersburg,Maryland,U.S.A,

Aug.8-13, 1993.


 

Papers Published (Proceedings) /Presented/Participated in the National Conferences (32)


 

  1. Room temperature ammonia and VOC sensing properties of CuO nanorods.

Bhuvaneshwari, S., and Gopalakrishnan, N.

(DAE SOLID STATE PHYSICS SYMPOSIUM 2015, Amity University Noida, UP 

December 25-29, 2015.

AIP Conf. Proc. Vol. 1731, No. 1, p. 050112.

 

  1. Study of Defects in Friction Stir Welded Dissimilar Aluminium Sample By Using Ultrasonic C Scan.

Angad Acharya, M. Ashok and N. Gopalakrishnan

National Seminar and exhibition on Non-Destructive Evaluation: 26-28 Nov.2015, Hyderabad, India.

 

  1. Defect Detection and Quantification with Advanced Ultrasonic

Aniket Kumar Tiwary, M. Ashok and N. Gopalakrishnan

National Seminar and exhibition on Non-Destructive Evaluation: 26-28 Nov.2015, Hyderabad, India.

  1. Multi-Frequency Approach for Accurate Thickness Measurement Of Steam Generator Tubes At Grooves Using Remote Field Eddy Current Technique

Manu Joseph, S. Thirunavukkarasu and N. Gopalakrishnan

National Seminar and exhibition on Non-Destructive Evaluation: 26-28 Nov.2015, Hyderabad, India.

 

  1. Evaluation of Residual Stress and High Cycle Fatigue in Low Carbon Steel through Electromagnetic Non-Destructive Techniques

Subash Koner, Ashis Kumar Panda, N. Gopalakrishnan, Amitava Mitra

National Seminar and exhibition on Non-Destructive Evaluation: 4-6 Dec.2014, Pune, India.

 

 

 

  1. Multi-Frequency Approach for Accurate Thickness Measurement Of Steam Generator Tubes using Remote Field Eddy Current Technique

Manu Joseph, S. Thirunavukkarasu and N. Gopalakrishnan, B.P.C. Rao, C.K. Mukhopadhyay and T. Jayakumar

National Seminar and exhibition on Non-Destructive Evaluation: 4-6 Dec.2014, Pune, India.

 

 

  1. Realization of low resistive p-ZnO thin film by Al-As codoping.

L. Balakrishnan, S. Gowrishankar and N. Gopalakrishnan

Department of Atomic Energy- Solid State Physics Symposium (DAE - SSPS 2011), SRM University, Chennai, India, December 2011(AIP Conference Proceedings).

AIP Conf. Proc. 1447 (2012) 763-764

 

  1. Structural, electrical and optical properties of GaPcodopedZnO thin films.

S. Gowrishankar, L. Balakrishnan and N. Gopalakrishnan

Department of Atomic Energy- Solid State Physics Symposium (DAE - SSPS 2011), SRM University, Chennai, India December 2011(AIP Conference Proceedings).

AIP Conf. Proc. 1447(2012) 771-772

 

  1. AlN doped (Codoped) ZnO films for the fabrication of p-ZnO.

L. Balakrishnan, J. Elanchezhiyan, K.P. Bhuvana, T. Balasubramanian and N.Gopalakrishnan

38thNational Seminar on Crystallography (NSC-38), University of Mysore, Karnataka, India, February 2009.

 

  1. Effect of thickness and substrate on ZnO thin films by RF sputtering.

K. Latha, L. Balakrishnan, T. Balasubramanian and N. Gopalakrishnan

38th National Seminar on Crystallography, Mysore University, Karnataka, India,

February 2009.

 

  1. Influence of oxygen pressure on Zn1-xMnxO thin films by RF sputtering.

B. Srimathy, L. Balakrishnan, J. Elanchezhiyan, T. Balasubramanian and N.Gopalakrishnan

38th National Seminar on Crystallography, Mysore University, Karnataka, India,

February 2009.

 

  1. Effect of thickness and substrate on ZnO thin films by RF sputtering

K. Latha, L. Balakrishnan, T. Balasubramanian and N. Gopalakrishnan

38th National Seminar on Crystallography, Mysore University, Mysore, India, Feb. 11-13, 2009.

 

 

  1. Influence of oxygen pressure on Zn1-xMnxO thin films by RF sputtering

Srimathy, L. Balakrishnan, J. Elanchezhiyan,T. Balasubramanian and N. Gopalakrishnan

38th National Seminar on Crystallography, Mysore University, Mysore, India,

Feb. 11-13, 2009.

 

  1. AlN doped (Codoped) ZnO films for the fabrication of p-ZnO

L.Balakrishnan, J.Elanchezhiyan, K.P.Bhuvana, T.Balasubramanian and N.Gopalakrishnan

National Seminar on Crystallography (NSC-38) held at University of Mysore, Karnataka

during Feb. 11-13, 2009.

 

 

  1. Participated in “Intellectual Property Rights Seminar” Tiruchirappalli, India, Jan. 9, 2009.

 

  1. Participated in “Traditional and Emerging NDE methods for Managers and Engineers”, IIT-

Madras, Chennai, India, Feb. 20-21, 2009.

 

  1. Participated in “National seminar & Exhibition on Non Destructive Evaluation-NDE 2009”,

BHEL & NIT, Tiruchirappalli, India, Dec.10-12,2009.

 

  1. Participated in “Indo-US workshop on Visible and Ultraviolet sources for Solid state Lighting

and Water Purification”, Crystal Growth Center, Anna University, Chennai, India,

Jan. 5-7, 2009.

 

  1. Participated in “Non Destructive Evaluation-NDE 2008”, Lonavala, India, Dec. 1-3, 2008.

 

  1. Substrates effects on GaN doped ZnO films grown by Pulsed Laser Deposition.

N.Gopalakrishnan, B.C.Shin, H.S.Lim, G.Y.Kim ,J.Kumar and Y.S.Yu.

National Symposium on Crystal Growth and Characterisation, Loyola College, Chennai, Sept.29-30, 2005.

 

  1. Growth of ZnO using codoping and triple codopingmethod by Pulsed laser deposition.

N.Gopalakrishnan, B.C.Shin, H.S.Lim, J.Kumar, T.Balasubramanian and Y.S.Yu.

Second National Symposium on Crystal Growth of Laser related materials SSN college of Engineering, Kalavakam, India, December 19-20, 2005

 

  1. Vapour Phase Epitaxial Growth of GaxIn1-xAs

N.Gopalakrishnan and R.Dhanasekaran

National Conference on fundamentals of Crystal Growth, Crystal Growth Centre, AnnaUniversity, Chennai, India, Jan.29-30, 1996.

 

  1. Investigation on the Nucleation and Growth Kinetics of Vapour Phase EpitaxialGrowth of III-V Binary, Ternary and Quaternary Compound Semiconducors-Thesis Presentation.

N.Gopalakrishnan and R.Dhanasekaran

DAE Solid State Physics Symposium, BARC, Bombay, Dec.27-31, 1996.

 

 

  1. Thermodynamic analysis of GaxIn1-xP Vapour Phase Epitaxy

N.Gopalakrishnan and R.Dhanasekaran

Sixth National seminar on Crystal Growth, Anna Univeristy, Chennai, Feb.2-4, 1995

  1. Vapour Phase Epitaxial Growth of GaxIn1-xSb

N.Gopalakrishnan and R.Dhanasekaran

National Conference on Recent Advances in Semiconductor, Indian Institute of Technology, New Delhi, June 20-22, 1995.

 

  1. Vapour Phase Epitaxial Growth of AlxGa1-xAs

N.Gopalakrishnan and R.Dhanasekaran

National seminar on emerging trends thin film technology and device fabrication, Cochin University of Science and Technology, Cochin, India, Nov.27-29, 1995.

 

  1. Investigations on the initial stages of the Vapour Phase Epitaxal Growth of GaxIn1-xP compound semiconductors

N.GopalakrishnanR.Dhanasekaran and P.Ramasamy

Material Research Society of India, Hyderabad, Feb.1994.

 

  1. Nucleation and Growth kinetics of Ga1-yInyAs1-xPx by VPE and oxide precipitates in CZ silicon

N.Gopalakrishnan,H.R.Dizasi, R.Dhanasekaran and P.Ramasamy

INDO-US workshop on Nucleation and Growth, Indian Institute of Sciences,Bangalore, March 14-16, 1994.

 

  1. Growth Kinetics of GaAs1-xPx Vapour Phase Epitaxy

N.Gopalakrishnan and R.Dhanasekaran

Proc. of Fifth National Seminar on Crystal Growth, Anna University, Chennai, Nov.18-20, 1993.

 

  1. Nucleation and Growth Kinetics of InAs1-xPx Vapour Phase Epitaxy

N.Gopalakrishnan and R.Dhanasekaran

XXV National seminar on Crystallography, Dept. of Bio-physics and Crystallography, Univ. of

Madras, Dec.15-17, 1993.

 

  1. Nucleation Kinetics of GaxIn1-xAs compound during Vapour Phase Epitaxial Growth

N.Gopalakrishnan, R.Dhanasekaran and P.Ramasamy.

XXIII National Seminar on Crystallography, MREC, Jaipur, March 23-25, 1992.

 

  1. Development of Growth Kinetics of InP thin films during Vapour Phase Epitaxy

N.Gopalakrishnan, R.Dhanasekaran and P.Ramasamy

XXIV National Seminar on Crystallography, Univ. Jammu, Oct.20-22, 1992.

 

 

Details of the Conferences organized (2)

 

  1. Conducted Workshop on ‘Advanced Coating Technologies and their Applications’ on 24 Jan. 2008. - Convener

  2. Conducted ‘Workshop on Advances in Nanomaterials and Thin films (WANT-2013)’ during 08-09 March 2013. – Convener